Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution

Abstract Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next‐generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe 2 at front‐end‐of‐line and back‐end‐of‐line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe 2 , which results in p ‐type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p ‐type nature of the V dopants is further verified by constructed field‐effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic‐grade wafer‐scale extrinsic 2D semiconductors.