Stress-Induced Phase Change of Single-Crystalline GaSb, InAs, and Ge

Uniaxial pressure precipitates metallic transition of GaSb and InAs. The lowest transition pressures obtained were 55–58 kbar (GaSb) and 63–67 kbar (InAs) in contrast to 65–75 kbar (GaSb) and 85–90 kbar (InAs), values reported so far. In the case of GaSb, uniaxial stress applied on (100) was the most inefficient to precipitate the transition, suggesting the same mechanism prevailing at the transition as in InSb. Although similar phenomenon was observed for Ge, quasi-hydrostatic pressure was more effective in precipitating the transition.