记忆电阻器
神经形态工程学
材料科学
欧姆接触
纳米尺度
纳米技术
电阻器
电导
电阻随机存取存储器
电子线路
逻辑门
可扩展性
计算机科学
光电子学
电气工程
电压
物理
人工神经网络
人工智能
工程类
图层(电子)
凝聚态物理
算法
数据库
作者
Theo Emmerich,Yunfei Teng,Nathan Ronceray,Edoardo Lopriore,Riccardo Chiesa,Andrey Chernev,В. Г. Артемов,Massimiliano Di Ventra,András Kis,Aleksandra Rađenović
标识
DOI:10.1038/s41928-024-01137-9
摘要
Abstract Neuromorphic systems are typically based on nanoscale electronic devices, but nature relies on ions for energy-efficient information processing. Nanofluidic memristive devices could thus potentially be used to construct electrolytic computers that mimic the brain down to its basic principles of operation. Here we report a nanofluidic device that is designed for circuit-scale in-memory processing. The device, which is fabricated using a scalable process, combines single-digit nanometric confinement and large entrance asymmetry and operates on the second timescale with a conductance ratio in the range of 9 to 60. In operando optical microscopy shows that the memory capabilities are due to the reversible formation of liquid blisters that modulate the conductance of the device. We use these mechano–ionic memristive switches to assemble logic circuits composed of two interactive devices and an ohmic resistor.
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