Near unity internal quantum efficiency and reliable vertical-cavity surface-emitting lasers

Vertical-cavity surface-emitting lasers (VCSELs) with low power consumption and high efficiency offer excellent characteristics for many applications. In this report, we design and demonstrate GaAs-based 940 nm VCSEL devices with different output mirror reflectivity values demonstrating slope efficiency from 0.97-1.16 (W/A) and show near unity internal quantum efficiency and low internal loss of 6.6 (cm^-1) at room temperature by using WIN Semiconductor 6-inch GaAs VCSEL wafer foundry service. Furthermore, the high temperature reliability test results guarantee quite long equivalent 14.6 years of operating time and stability.