轨道能级差
密度泛函理论
星团(航天器)
Atom(片上系统)
电子亲和性(数据页)
原子物理学
化学
电离能
结合能
碎片(计算)
电离
电子结构
结晶学
带隙
化学物理
分子物理学
计算化学
物理
分子
凝聚态物理
有机化学
嵌入式系统
操作系统
计算机科学
离子
程序设计语言
作者
Wei Zhang,Huan Zhang,Yifu Li,Xiumin Chen,Bin Yang,Baoqiang Xu
标识
DOI:10.1002/pssb.202300438
摘要
The ground‐state structure, average binding energy ( E b ), fragmentation energies (Δ E ), second‐order difference energy (Δ 2 E ), gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital (HOMO‐LUMO), vertical ionization potential (VIP), vertical electron affinity (VEA), and charge transfer of Sn n Al n ( n = 2–12) clusters are evaluated by density functional theory (DFT). With an increase in the cluster size n , Al atoms aggregate in the geometric center of the cluster, and Sn atoms encapsulate Al atoms in the periphery of the cluster. The variation of Δ E , Δ 2 E , the HOMO‐LUMO gap, VIP, and VEA of the Sn n Al n clusters follows similar trends, with certain odd–even oscillations. However, beyond the cluster size n ≥ 9, the HOMO‐LUMO gap decreases significantly, and the VIP and VEA fluctuate significantly, indicating a deterioration of the relative stability of the cluster. Charge transfer proceeds from the Sn atom to the Al atom. This study provides an analysis of the interaction between Sn and Al at the atomic level and explains the segregation phenomenon during the preparation of tin‐aluminum alloys.
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