量子点
光电子学
电容
二极管
空间电荷
材料科学
发光二极管
电荷(物理)
量子点激光器
物理
半导体激光器理论
电子
电极
量子力学
作者
Xiangwei Qu,Jingrui Ma,Depeng Li,Kai Wang,Xiao Wei Sun
摘要
In this work, we report the capacitance recovery behavior in the blue quantum dot light-emitting diode (QLED) by capacitance–voltage (C–V) characterizations. A comprehensive study of the C–V, dC/dV–V, and current density–voltage characteristics of pristine and shelf-aged devices suggests that capacitance recovery is associated with space charge-induced charge accumulation. At lower temperatures, the capacitance recovery in the shelf-aged device is efficiently suppressed due to the difficulty in building up the space charge, which supports our argument. Moreover, the capacitance recovery behavior of QLED only happens at low frequencies (a few hundred hertz), which is related to the time constant for charge accumulation at the selected voltage. Our work shows the effect of space charge on device capacitance and enriches the comprehension of carrier processes in QLED under AC measurement.
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