Development free vapor photolithography (DFVP) is a new kind of dry etching photolithographic technique. In order to develop the application of DFVP on silicon substrate, sol gel method were used to preparing the sol gel derived silica film on non silicone substrate at normal temperature and normal pressure. The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etching rates of exposure and un exposure areas under the optimized parameters of DFVP process.