Near infrared and shortwave infrared light detection: next-generation organic photodetectors for imaging and biometric applications
作者
Nicola Gasparini
标识
DOI:10.1117/12.3113440
摘要
Organic photodetectors (OPDs) capable of detecting near-infrared (NIR) and short-wave infrared (SWIR) light are emerging as promising candidates for low-cost, large-area optoelectronic applications. Achieving efficient NIR detection with solution-processed organic semiconductors remains challenging due to their inherently limited absorption bandwidths. However, the advent of nonfullerene acceptors (NFAs) and ultra-low bandgap polymers has enabled precise control over molecular energy levels and optical band gaps, paving the way for extended infrared responsivity > 1000nm. Building on advances in organic photovoltaics, the design of optimised donor:acceptor blends and the mitigation of charge carrier recombination are now central strategies for achieving high-efficiency and durable NIR–SWIR OPDs. This talk outlines material and device design principles that drive effective light-to-current conversion in this spectral range, highlighting pathways for the next generation of infrared organic photodetectors.