神经形态工程学
记忆电阻器
材料科学
光电子学
非易失性存储器
计算机科学
同轴
动态随机存取存储器
弯曲
电压
光子学
突触后电流
压阻效应
超短脉冲
内存处理
电阻随机存取存储器
电子工程
等离子体子
块(置换群论)
薄膜
电铸
柔性电子器件
MNIST数据库
闪存
突触
CMOS芯片
光调制器
堆栈(抽象数据类型)
信号(编程语言)
夹紧
光开关
相变存储器
晶体管
超大规模集成
信号处理
作者
Keying Li,Jieru Song,Le Chen,Y Q He,Jialin Meng,Tianyu Wang,Hao Zhu,Qingqing Sun,Peining Chen,David Wei Zhang,Lin Chen
出处
期刊:ACS Nano
[American Chemical Society]
日期:2026-07-06
卷期号:20 (28): 19967-19975
被引量:1
标识
DOI:10.1021/acsnano.6c00539
摘要
Bioinspired optoelectronic neuromorphic devices have overcome the limitations of von Neumann architectures. However, most existing devices used in neuromorphic applications are unsuitable for highly flexible, wearable applications. To address this constraint, this work successfully demonstrated a Pt/TiO x /NiO x /Au memristor by depositing thin films on coaxial fibers and patterning via electron beam evaporation. Notably, this reconfigurable device can switch between a synapse and a neuron under a cross-modal signal without compromising its internal structure. Under electrical signals, the device emulates the integrate-and-fire function of volatile neurons. Under optical signals, it exhibits nonvolatile synaptic functionalities, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), the transition from short-term memory (STM) to long-term memory (LTM), and learning-experience behaviors. Using the short-term memory with decaying characteristics under optical pulse stimulation, fashion image recognition from the MNIST database and spoken-digit recognition from the NIST TI46 database were achieved through reservoir computing (RC) with recognition rates of 93.0% and 98.6%, respectively. Meanwhile, the device exhibits stable responses to optical and electrical inputs under different bending radii and bending cycles, indicating its robust stability and high flexibility under mechanical deformations. This work demonstrates significant potential for fiber-based neuromorphic devices.
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