Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Abstract Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p‐Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p‐type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p‐type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p–i–n junctions, and metal–semiconductor junctions of photodetectors based on inorganic p‐type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.