Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics

With the shortening of chip processes, the number of contained electrons and the supply voltage are decreased. When the energy level of contained electrons is close to the Landauer limit, the traditional analysis method based on empirical equations can no longer accurately analyze the nonequilibrium information processing of transistor logic gates. Based on stochastic thermodynamics theory, we propose an energy consumption model for a single-electron transistor AND gate which can be calculated by the input state transitions. Based on the proposed AND gate energy consumption model, an optimal input sequence operation method is proposed to reduce the energy consumption of three-input AND gate. Simulation results show that the energy consumption of three-input AND gate is reduced by up to 63.39% using the optimal operation method.