五角双锥分子几何
双锥
磁矩
X射线光电子能谱
结晶学
氧化态
化学键
化学
电子结构
铁磁性
Atom(片上系统)
锗
材料科学
晶体结构
计算化学
凝聚态物理
核磁共振
物理
金属
有机化学
计算机科学
嵌入式系统
硅
作者
Li‐Juan Zhao,Hong‐Guang Xu,Xi‐Ling Xu,Wei‐Jun Zheng
摘要
We investigate the structures and properties of Mn2Ge4-/0 and Mn2Ge5-/0 by anion photoelectron spectroscopy and theoretical calculations. The vertical detachment energies (VDEs) of Mn2Ge4- and Mn2Ge5- are measured to be 2.69 eV and 2.49 eV, respectively. It is found that neutral Mn2Ge4 has an approximate quadrilateral bipyramidal structure with C2v symmetry and 11B2 electronic state. Neutral Mn2Ge5 has a pentagonal bipyramidal structure with C2v symmetry and 11B2 electronic state. The 4s-based molecular orbitals of the Mn atoms participate in the chemical bonding with the Ge4 and Ge5 fragments in Mn2Ge4 and Mn2Ge5. In Mn2Ge4, the two Mn atoms interact with the Ge4 moiety via four GeGeMn 3c-2e σ bonds. In Mn2Ge5, the two Mn atoms interact with the Ge5 moiety via one MnGeMn 3c-2e σ bond and four GeMnGe 3c-2e σ bonds. The analysis of magnetic properties reveals that both Mn2Ge4 and Mn2Ge5 exhibit highly ferromagnetic characteristics with a magnetic moment of 10 μB which mainly originated from the Mn atoms. These double Mn atom doped germanium clusters may provide new opportunities to design novel spintronic devices featuring high magnetic moments.
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