Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

In this work, a study of the influence of the processing conditions on the blistering of Al2O3 layers grown by atomic layer deposition (ALD) on silicon substrates is presented. The phenomenon occurs when the as-deposited layers are annealed at high temperature in a N2 atmosphere. The characterization of the blistering in terms of density and dimensions indicates that the higher the annealing temperature the higher the density but also the smaller the blister diameter, while the thicker the oxide the larger the blisters. The processing of the blistered layers to obtain Al-Al2O3-Si structures enhances the blistering phenomenon and at the same time affects the silicon surface underneath the blister. This has been evidenced by chemical etching of the deposited layers that have revealed in circular silicon voids of the size of the blister. The influence of the oxygen precursor used in the ALD process has also been investigated, showing that the blister size is reduced when using O3 instead of H2O. Finally, the use of a thin thermally grown SiO2 layer is shown to avoid blistering of Al2O3 films.