A Study on High-voltage Low-power Power MOSFET of Optimization for Industrial Motor Drive
作者
Bum-June Kim,Hun-Suk Chung,Seongjong Kim,Eun-Sik Jung,Ey-Goo Kang
出处
期刊:Journal of KIEEME [The Korean Institute of Electrical and Electronic Material Engineers] 日期:2012-03-01卷期号:25 (3): 170-175被引量:2
标识
DOI:10.4313/jkem.2012.25.3.170
摘要
Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.