Efficient Synthesis of Heteroatom (N or S)‐Doped Graphene Based on Ultrathin Graphene Oxide‐Porous Silica Sheets for Oxygen Reduction Reactions

Abstract Heteroatom (N or S)‐doped graphene with high surface area is successfully synthesized via thermal reaction between graphene oxide and guest gases (NH 3 or H 2 S) on the basis of ultrathin graphene oxide‐porous silica sheets at high temperatures. It is found that both N and S‐doping can occur at annealing temperatures from 500 to 1000 °C to form the different binding configurations at the edges or on the planes of the graphene, such as pyridinic‐N, pyrrolic‐N, and graphitic‐N for N‐doped graphene, thiophene‐like S, and oxidized S for S‐doped graphene. Moreover, the resulting N and S‐doped graphene sheets exhibit good electrocatalytic activity, long durability, and high selectivity when they are employed as metal‐free catalysts for oxygen reduction reactions. This approach may provide an efficient platform for the synthesis of a series of heteroatom‐doped graphenes for different applications.