Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment

This work reports on the electrical and Raman scattering analysis of Cu(In,Ga)Se2 cells synthesised with different densities of Se and Cu related point defects. The analysis of the Raman spectra from the surface region of the absorbers shows a direct correlation between the spectral features of the main Raman peak and the density of Se vacancies detected by admittance spectroscopy, being sensitive to the presence of vacancy densities higher than 1015 cm−3. These results corroborate the potential of Raman scattering for the non-destructive detection of electronic defects with potential impact on the characteristics of the solar cells.