单层
化学气相沉积
沉积(地质)
材料科学
电荷(物理)
上游(联网)
纳米技术
光电子学
化学
计算机科学
物理
电信
地质学
古生物学
量子力学
沉积物
作者
T. Wang,Jiangtao Guo,Yong Zhang,Wen Yang,Xiaobo Feng,Jing Li,Peizhi Yang
标识
DOI:10.1021/acs.cgd.3c01369
摘要
Molybdenum disulfide (MoS2) bears great potential in high-performance functional devices because of its tunable band structure, large surface area, and high charge carrier mobility. However, fabricating high-quality monolayer MoS2 via chemical vapor deposition still faces challenges. Here, an upstream deposition strategy is reported to obtain a high-quality monolayer MoS2 with high nucleation density and uniformity. Compared with the conventional downstream deposition method, the upstream deposition method presents excellent morphological characteristics. More importantly, MoS2 prepared by the upstream deposition method shows a stronger charge capture ability at the liquid–solid interface.
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