Preparation of ITO/p-Si heterojunction on PI substrate by magnetron sputtering

This paper presents the preparation of an ITO/p-Si heterojunction on a polyimide (PI) substrate using magnetron sputtering. The microstructure and optoelectronic properties of the heterojunction were characterized using field emission scanning electron microscopy, X-ray photoelectron spectroscopy, four-probe testing, digital source meter, multimeter, UV-visible spectrophotometer, and laser confocal micro-Raman spectroscopy. Experimental results showed that the heterojunction has a resistivity of 0.82 Ω·cm and exhibits MOS capacitance characteristics in its IV curve. The heterojunction has good optical properties, with its strongest absorption occurring in the UV region at 221 nm. Under excitation by a 325 nm laser, the heterojunction exhibits an emission peak at both 586 nm and 632 nm.