Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs

This work reports an effective technique that is proposed for the simultaneous extraction of the energy distribution of donor- and acceptor-like interface trap states [Dit,D(E) and Dit,A(E)] over a wide range of bandgap energies using a single current–voltage (I–V) measurement in vertically stacked silicon nanowire (Si-NW) gate-all-around field-effect transistors. In the proposed method, we analyzed Dit,D(E) and Dit,A(E) based on the trap-induced photoresponsive gate-induced drain leakage with sub-bandgap optical source (Eph = hν < Eg) at VGS ≪ VFB and differential body factor technique in the subthreshold current at VFB < VGS < VT, respectively.