钝化
材料科学
发光二极管
钙钛矿(结构)
碘
卤素
二极管
空位缺陷
残留物(化学)
卤化物
化学工程
光电子学
结晶
纳米技术
无机化学
结晶学
有机化学
化学
冶金
烷基
图层(电子)
工程类
作者
Ji Jiang,Zhengchang Xia,Mingming Shi,Zhigang Yin,Wenzhe Huang,Libin Zeng,A. Wang,Yi‐Ming Shi,Gufeng He,Jingbi You,Xingwang Zhang
标识
DOI:10.1002/adma.202503699
摘要
Abstract Perovskite light‐emitting diodes (PeLEDs) face a tough challenge that halogen vacancy defects limit device performance, while the introduction of additional agents to passivate defects may potentially compromise the stability of the structure and increase the complexity of the system. Here, elemental iodine (I 2 ) is employed as an additive, utilizing its ability to create an iodine‐rich condition and to transform into I − ions for passivating iodine vacancy defects, while its volatile nature ensures no residue and avoids the introduction of extraneous elements. This approach also alters the perovskite's surface energy and subsequently regulates its crystallization kinetics, which results in a more well‐crystallized perovskite with vertically‐aligned organic spacer layers, in turn promoting the transport of charge carriers. On the basis of this strategy, PeLEDs with efficiencies of 32.5% and 29.5% for deep‐red (678 nm) and pure‐red (649 nm) have been achieved, respectively.
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