Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering

Abstract In this study, amorphous boron carbide (B x C) and hydrogenated amorphous B x C (B x C:H) films were deposited via magnetron sputtering to investigate the effects of hydrogen on the film properties. The critical load decreased with increasing H 2 flow ratio, probably due to an increase in the internal stress. In addition, the optical bandgap increased with the H 2 flow ratio increased. The bandgap was controlled by the chemical bonding of carbon atoms and the chemical composition of films. The resistivity of the films increased with the H 2 flow ratio and bandgap energy. The current–voltage characteristics of B x C(:H)/n-type Si heterojunctions under white light illumination showed that the short-circuit current density and open-circuit voltage were higher than the previously reported values. Results revealed that the introduction of hydrogen during deposition reduced the short-circuit current density, fill factor, and conversion efficiency, whereas the open-circuit voltage remained almost unchanged.