Solution processed Ti3C2 MXene nanosheets as resistive switching layers in flexible RRAM devices for sustainable electronics

Abstract Due to their exceptional chemical stability and tunable chemical properties particularly the interlayer bonding, MXenes have emerged as promising switching layers in RRAM devices. This work presents the synthesis of nanosheets of a widely explored MXene (Ti 3 C 2 ), and its application for demonstrating high performance flexible RRAM devices through solution processing, which is rarely demonstrated till date. The structural and morphological properties of Ti 3 C 2 nanosheets were comprehensively investigated using various characterization techniques. RRAM devices were fabricated on ITO coated PET substrate with both Ag and Al as top electrodes. The Ag/Ti 3 C 2 /ITO RRAM devices showed excellent retention time of 10 4 s with I ON / I OFF of ∼10 3 and low average V SET & V RESET voltages of ∼0.8 V &- 0.7 V suitable for low voltage operation. On the other hand Al/Ti 3 C 2 /ITO RRAM devices exhibited similar excellent retention time of 10 4 s and reliable switching characteristics with higher I ON / I OFF of ∼10 4 , yet a high V SET of 3.5 V and low V RESET of −0.85 V. These devices were further investigated for stability of electrical performance upon bending at various radii of 12 mm, 7 mm, and 5 mm, indicating consistent switching. Among the two, the Al/Ti 3 C 2 /ITO device exhibited superior mechanical flexibility, maintaining a higher I ON / I OFF (∼10 4 –10 5 ) and stable retention of both LRS and HRS under bending radii down to 5 mm, whereas the Ag/Ti 3 C 2 /ITO device showed a noticeable decline in HRS stability and I ON / I OFF (from ∼10 3 to ∼10 1 ), indicating the Al-based device is more feasible for flexible memory applications. These findings confirm that solution-processed Ti 3 C 2 can be a promising switching layer for flexible and sustainable electronics.