dBc公司
压控振荡器
相位噪声
电气工程
变压器
比克莫斯
静脉曲张
功勋
LC电路
闪烁噪声
材料科学
工程类
电容
电容器
电子工程
电压
光电子学
噪声系数
物理
晶体管
CMOS芯片
放大器
电极
量子力学
作者
Zhaoxin Hu,Eric Wagner,Tzu-Chien Hsueh,Gabriel M. Rebeiz
标识
DOI:10.1109/tmtt.2023.3259523
摘要
This article presents a 27.9–28.8-GHz voltage-controlled oscillator (VCO) in a 90-nm SiGe BiCMOS process. The VCO consists of class-C active devices and a transformer tank. A transformer tank model which captures all parasitic capacitance is formulated. Several transformer design examples are studied and compared with an LC tank in terms of quality factor and tuning range. The VCO achieves a state-of-the-art phase noise of −111.5 dBc/Hz at 1-MHz offset. The figure-of-merit (FoM) is 187 dBc/Hz, and the flicker corner is 82 kHz with a power consumption of 24.7 mW. Potential applications include phase-locked loops (PLLs) for wireless systems at 28, 60, and 90 GHz.
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