Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors

Semiconductor-based mid-wave infrared photon detectors that functionalize space-based imaging systems are susceptible to both cumulative ionization and displacement damage, especially due to proton irradiation. Here, the dark current density and quantum efficiency of a mid-wave infrared detector utilizing a strain-balanced InGaAs/InAsSb superlattice active region are examined as a function of a 63 MeV proton radiation dose. Proton-irradiation is performed in an incremental stepwise dose up to a total ionizing dose of 100 krad(Si) or an equivalent proton fluence of 6.1 × 1011 protons/cm2. All characterization work is conducted with the detectors held at an operating temperature of 130 K throughout the experiment to limit thermal annealing effects. Prior to irradiation, the quantum efficiency of the top-side illuminated device without anti-reflection coating is 59.5%. The quantum efficiency is largely independent of temperature below 150 K, indicative of an electron minority carrier. As irradiation progressed the typical linear increase in inverse quantum efficiency with increasing proton fluence was observed, which led to a quantum efficiency damage factor of 1.12 × 1013 e cm2/ph. This value is shown to be an order of magnitude lower than typically observed in III-V nBn devices and is likely due to the higher mobility of minority electrons in the active region of this device. A full analysis of the characterization results suggests that displacement damage creates a significant population of donor states that modify the doping profile, in addition to Shockley–Read–Hall recombination centers that generally form as a result of proton irradiation.