A Compact Model of Drift and Diffusion Memristor Applied in Neuron Circuits Design

A compact model of memristor for unifying two switch characteristics, drift and diffusion has been proposed, based on the ion dynamic transport theory at the oxide interface layer. The model is verified by measured data in different oxide-material-based drift/diffusion memristors, and well fits DC/AC characteristics of both devices, under parameter variations and temperature evolution. Moreover, the applications of this model in neuron circuits design are shown.