Low-Power Low-Noise SiPM Readout Preamplifier for Harsh Environments

A low-power, low-noise first-stage transimpedance amplifier (TIA) for silicon photomultiplier (SiPM) readout has been developed for harsh environments, targeting low Earth orbit (LEO) CubeSat applications. The circuit ensures reliable operation up to a total ionizing dose (TID) of 160 krad(SiO2) and with temperatures ranging from -55 °C to +125 °C. The TIA employs a folded-cascode architecture implemented in a 0.18 μm bulk CMOS process. It includes a low-voltage cascode bias circuit that is specifically designed to maintain functionality under shifts in the MOSFET electrical parameters induced by irradiation and temperature variations. This study combines simulation and experimental characterization to evaluate the readout performance of the TIA using a commercial Hamamatsu S13360-1375 SiPM. Under nominal conditions, the measured amplifier achieves a bandwidth of 4.6 MHz when connected to the SiPM, with a power consumption of 238 μW. The TIA also shows a measured input-referred noise of 61.0 nArmswhen connected to an optimal input capacitance of 12 pF. Measurements confirm that the readout operation is maintained without significant degradation after irradiation and across the full temperature range, validating its suitability for LEO applications.