Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al0.8In0.2N/AlN/GaNand nearly lattice matched Al0.84In0.16N/AlN/GaNheterostructures at room temperature.No current saturation is reached because we minimized the effect of the Joule heating.The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density.The estimated drift velocity ≈ 1.5 × 10 7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.