光电子学
材料科学
光电二极管
异质结
紫外线
吸收(声学)
复合材料
作者
Won Ho Jang,Hyun-Seop Kim,Myoung-Jin Kang,Chun-Hyung Cho,Ho-Young Cha
出处
期刊:Journal of Semiconductor Technology and Science
[The Institute of Electronics Engineers of Korea]
日期:2019-04-30
卷期号:19 (2): 184-189
被引量:5
标识
DOI:10.5573/jsts.2019.19.2.184
摘要
We developed an AlGaN/GaN heterojunction phototransistor with a recessed detection area to enhance the photoresponsivity. The recessed-AlGaN/GaN phototransistor exhibited a maximum photoresponsivity of 1.6 × 107 A/W at 375 ㎚, which was ~30% higher than that obtained with a conventional AlGaN/GaN phototransistor. A comparable photoresponsivity was also achieved at 260 ㎚ in UV-C range due to the dual absorption process in conjunction with the polarization induced built-in electric field characteristics of AlGaN/GaN heterojunction.
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