Reliability analysis of TSV silicon perforated structures under thermal cyclic loading

Purpose This study aims to enhance the thermal cycle reliability of hollow through-silicon via (TSV) structures in three-dimensional (3D) electronic packaging by optimising structural parameters to minimise the equivalent plastic strain in critical solder joints, thereby extending their fatigue life under thermal cycling conditions. Design/methodology/approach A 3D finite element model of the TSV package was developed to analyse stress−strain behaviour under thermal cycling. Two optimisation methodologies − Taguchi orthogonal method and response surface method − were used to identify optimal parameter combinations. Key variables included hollow structure material, dimensions (height and diameter) and solder joint geometry. The Anand viscoelastic model was applied for solder joints, and fatigue life prediction was conducted using the Engelmaier model. Findings The optimised parameters derived from the Taguchi method (tungsten material, hollow height: 75 µm, diameter: 44 µm; solder joint diameter: 68 µm, height: 22 µm) reduced the equivalent plastic strain by 11.94%. Further refinement via the response surface method achieved a 17.49% reduction (hollow height: 75.801 µm, diameter: 42.761 µm; solder joint diameter: 67.944 µm, height: 21.981 µm). Fatigue life prediction indicated a 1.26-fold lifespan improvement post-optimisation, demonstrating significant reliability enhancement. Originality/value This research innovatively combines Taguchi and response surface methods for multi-stage optimisation of TSV structures; the optimal combination of TSV structural parameters is constructed. It fills a gap in thermal performance parameter optimisation for TSV hollow structures and provides a scientific foundation for improving reliability in 3D electronic packaging, offering practical engineering significance for high-density integrated circuit design.