凝聚态物理
铁磁性
磁电阻
材料科学
磁场
各向异性
半导体
散射
热电效应
电阻率和电导率
热导率
磁畴
磁畴壁(磁性)
声子
平均自由程
热传导
带隙
格子(音乐)
载流子散射
焦耳加热
弱局部化
塞贝克系数
电子
热的
居里温度
巨磁阻
磁各向异性
物理
费米能级
磁性半导体
作者
Houpu Li,Zhiwei Wang,Kaibao Fan,Nan Zhang,Kaixin Tang,Hongyu Li,Tao Qi,Ziji Xiang,Xianhui Chen
出处
期刊:Physical review
[American Physical Society]
日期:2025-08-28
卷期号:112 (12)
摘要
${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$, a quasi-2D ferrimagnetic nodal-line semiconductor with ${T}_{\mathrm{c}}=78$ K, exhibits strongly angular-dependent colossal magnetoresistance (CMR) in its magnetically ordered state, which is featured by the development of a unique metallic state under magnetic fields along the $c$ axis. Recently, a peculiar chiral orbital current (COC) state has been proposed to exist in this compound, evidenced by the effective manipulation of magnetotransport properties via applying electrical currents. A field-induced insulator-to-metal transition (IMT) and field-controlled electron scattering off COC domain boundaries thus serve as two feasible origins of the CMR in ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. Here, we further explore the current- and field-driven variations of electronic states in ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$ by scrutinizing its electrical transport, thermoelectric, and thermal transport properties. A combination of $I\text{\ensuremath{-}}V$ characteristics and Ettingshausen effect studies allows us to pinpoint the predominant impact of Joule heating on triggering the current-induced IMT. Measurement of the Seebeck effect unambiguously reveals a reduction of the band gap occurring concomitantly with the CMR, in accordance with the field-driven IMT scenario. A remarkable enhancement of thermal conductivity below ${T}_{\mathrm{c}}$ is observed when magnetic field is applied along $c$ but is absent under in-plane magnetic fields. Such an anisotropic positive magnetothermal conductivity most likely reflects increase of the phonon mean free path stemming from the field-induced suppression of boundary scattering, hence it implies the presence of certain types of field-tunable structural domain walls in ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. Our findings not only underscore the intricate interplay between the spin, charge, and lattice degrees of freedom in ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$, but also point toward cooperative mechanisms for its CMR: Whereas the field-driven IMT appears to be the most essential cause, domain boundary scattering may still play a secondary role.
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