High performance Ge pMOS devices using a Si-compatible process flow

Ge pMOS mobilities up to 358 cm ² /Vs are demonstrated using a Si-compatible process flow without the incorporation of strain. EOT is approximately 12 Å with a gate leakage less than 0.01 A/cm ² at Vt + 0.6 V. Ge transistors are characterized with gate lengths ranging from 10 μm down to 0.125 μm, the shortest ever reported. We also present the best Ge pMOS drain current to date of 790 μA/μm at V _gt = V _d =-1.5V for an L _g of 0.19 μm.