REFLECTIVITY THICKNESS CORRECTIONS FOR SILICON DIOXIDE FILMS ON SILICON
作者
R. Wesson,Ham Young,W. A. Pliskin
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1967-08-01卷期号:11 (3): 105-106被引量:6
标识
DOI:10.1063/1.1755037
摘要
The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air-silicon dioxide and silicon dioxide-silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.