石墨烯
材料科学
方石英
兴奋剂
曲面(拓扑)
费米能级
石英
化学物理
纳米技术
凝聚态物理
光电子学
化学
物理
复合材料
几何学
量子力学
数学
电子
作者
Xiaofeng Fan,Weitao Zheng,Viorel Chihaia,Zexiang Shen,Jer‐Lai Kuo
标识
DOI:10.1088/0953-8984/24/30/305004
摘要
With first-principles DFT calculations, the interaction between graphene and SiO2 surface has been analyzed by constructing the different configurations based on {\alpha}-quartz and cristobalite structures. The single layer graphene can stay stably on SiO2 surface is explained based on the general consideration of configuration structures of SiO2 surface. It is also found that the oxygen defect in SiO2 surface can shift the Fermi level of graphene down which opens out the mechanism of hole-doping effect of graphene absorbed on SiO2 surface observed in experiments.
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