High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range

GaInAsSb/GaSb p-n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room-temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.