Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Hybrid floating gate memories (HFGMs) based on organic field-effect transistors have been extensively investigated owing to their remarkable charge trapping performance, good compatibility with integrated circuit, and simple solution preparation process. Here, a high-performance HFGM with a large memory window is demonstrated by sandwiching a [6,6]-phenyl-C61-butyric acid methyl ester@polystyrene hybrid floating gate between two layers of pentacene. A series of programming operations with different voltages and time prove the enhanced effect of the sandwich structure on the memory window. The memory window is enlarged by up to 347% under different programming operations. Compared to the memory device without the sandwich structure, the new memory device also presents admirable endurance and retention characteristics in 600 continuous erasing–reading–programing–reading cycling and data retention tests. Thus, the HFGM with the sandwich structure provides a feasible path to develop high-performance memory devices with a large memory window, which is beneficial for practical application and popularization.