石墨烯
材料科学
化学气相沉积
氮化硼
六方氮化硼
纳米技术
制作
石墨烯纳米带
石墨烯泡沫
图层(电子)
氧化石墨烯纸
硼
光电子学
病理
有机化学
化学
医学
替代医学
作者
Min Wang,Sung Kyu Jang,Won‐Jun Jang,Minwoo Kim,Seong‐Yong Park,Sang‐Woo Kim,Se‐Jong Kahng,Jae‐Young Choi,Rodney S. Ruoff,Young Jae Song,Sungjoo Lee
标识
DOI:10.1002/adma.201204904
摘要
Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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