Study on Ohmic Contact of AZO/N~+-Si

The fabrication method and electrical characteristics of AZO/N+-Si(polycrystalline silicon) contact are presented.For AZO/N+-Si contact system,the optimal fabrication conditions for Ohmic contact are obtained,and the minimum specific contact resistance is tested to be 7.32×10-4 Ω·cm2,which can satisfy the performance requirements of devices and can be used for the fabrication of transparent electrodes in high-efficiency silicon solar cells.