A Theory Model on Remote-interface-roughness-scattering from High-k/Interlayer Dielectric Stacks

The degradation of carrier mobility caused by remote-interface-roughness-scattering was simulated using two-subband model.The effects of permittivity and thicknesses of high-k and interlayer on RIRS-limited mobility were discussed.The simulated results show that an interlayer dielectric with higher permittivity and high-k dielectric with lower permittivity are preferred to keep high mobility and small EOT.