Optical properties of 4H-SiC and 6H-SiC from infrared to vacuum ultraviolet spectral range ellipsometry (0.05–8.5 eV)

材料科学 紫外线 红外线的 椭圆偏振法 真空紫外 光电子学 航程(航空) 光学 薄膜 纳米技术 复合材料 物理
作者
Madan K. Mainali,Prabin Dulal,Bishal Shrestha,Emily Amonette,Ambalanath Shan,Nikolas J. Podraza
出处
期刊:Surface Science Spectra [American Institute of Physics]
卷期号:31 (2) 被引量:4
标识
DOI:10.1116/6.0003676
摘要

Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are obtained from reflection mode spectroscopic ellipsometry and unpolarized transmittance measurements for 4H and 6H stacking sequence silicon carbide (SiC) nitrogen-doped single crystals from the infrared (IR) to vacuum ultraviolet (VUV) spectral range. A single parametric model describing ɛ predominately for the ordinary directions is developed over the 0.05–8.5 eV spectral range from analysis of (0001)-oriented back side roughened 4H-SiC and 6H-SiC single crystals with some contribution from the extraordinary direction of 6H-SiC in the IR region. Indirect bandgaps for 4H-SiC and 6H-SiC are found to be 3.30 and 3.03 eV, respectively, and the corresponding direct optical gaps are at 4.46 and 4.42 eV. A model describing the optical response in the IR spectral range is created using a Drude expression and either transverse optical (TO) and longitudinal optical (LO) (TOLO) or Lorentz oscillator models. Free carrier concentration (N) is optically measured to be 3.7 × 1018 and 3.3 × 1018 cm−3 using TOLO and Lorentz oscillator models, respectively, and the corresponding carrier mobility (μ) is 34 and 39 cm2/V s for 4H-SiC. Under the same assumption for 6H-SiC, N is measured to 8 × 1018 cm−3 using either TOLO or Lorentz oscillator models and μ is 9 and 10 cm2/V s using the TOLO and Lorentz oscillator models, respectively, in the ordinary direction and 5 cm2/V s in the extraordinary direction using either model. For 4H-SiC, using the TOLO oscillator model, TO and LO phonon modes are measured at 797.7 and 992.1 cm−1, respectively, and corresponding modes are found at same locations using the Lorentz oscillator model. In 6H-SiC, using the TOLO model, TO modes in ordinary and extraordinary directions are found at 797.7 and 789.7 cm−1, and corresponding modes are at 796.9 and 788.9 cm−1 using the Lorentz oscillator model. The LO modes using the TOLO model are found at 992 and 984 cm−1 in the ordinary and extraordinary directions, respectively, and the same modes in the corresponding direction using the Lorentz oscillator model are located at 975.9 and 967.9 cm−1.
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