Noncollinear Mn3Sn for antiferromagnetic spintronics

In recent years, antiferromagnetic spintronics has attracted enormous attentions due to the great potential for next-generation picosecond and highly packed information technology. Since the theoretical prediction and experimental observation of the large anomalous Hall effect in the noncollinear antiferromagnetic metal Mn3Sn, which break the traditional perception that the anomalous Hall effect is proportional to magnetization, this material itself has become a hot spot in the antiferromagnetic spintronics. More intriguingly, evidence for the existence of Weyl points in Mn3Sn has been reported, making it an ideal candidate even for topological antiferromagnetic spintronics. In this review, we comprehensively summarize various exotic spintronic properties of Mn3Sn, such as the anomalous Hall effect, the anomalous Nernst effect, the topological Hall effect, the magneto-optical Kerr effect, the spin Hall effect and its Terahertz spintronic response. In order to build practical spintronic devices, we then discuss the manipulation of its spin structures for random access memory device applications. In the final part, brief perspectives on future research regarding Mn3Sn are presented, which are expected to pave the way for practical device applications related to the antiferromagnetic spintronics field.