沟槽
电场
材料科学
炸薯条
理想(伦理)
光电子学
GSM演进的增强数据速率
阻塞(统计)
电压
击穿电压
高压
功率半导体器件
浅沟隔离
电气工程
工程类
计算机科学
物理
纳米技术
电信
图层(电子)
认识论
计算机网络
哲学
量子力学
作者
Ryu Kamibaba,Kenichi Takahama,Ichiro Omura
出处
期刊:International Symposium on Power Semiconductor Devices and IC's
日期:2010-06-06
卷期号:: 107-110
被引量:20
摘要
Trench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena.
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