晶闸管
MOS控制晶闸管
材料科学
阳极
碳化硅
电气工程
快速切换
集成门极换流晶闸管
门极关断晶闸管
电压降
饱和电流
阴极
光电子学
静电感应晶闸管
电压
电流(流体)
绝缘栅双极晶体管
工程物理
工程类
电极
复合材料
晶体管
化学
物理化学
栅氧化层
作者
Siddarth Sundaresan,Eric Lieser,Ranbir Singh
出处
期刊:Materials Science Forum
日期:2012-05-14
卷期号:717-720: 1159-1162
被引量:2
标识
DOI:10.4028/www.scientific.net/msf.717-720.1159
摘要
Silicon Carbide Anode Switched Thyristors (ASTs) overcome major limitations of conventional Si and SiC IGBT and GTO Thyristor solutions by providing robust, latch-up free turn-off at high currents, current saturation in the output characteristics, and a wide safe operating area (SOA) through series current controlled device turn-off. In this work, detailed static and switching characteristics of 6.5 kV-class SiC ASTs are reported, which include a low on-state voltage drop of 4 V at 100 A/cm 2 , slight positive temperature co-efficient of Von, current saturation at > 100 A Cathode currents and fast turn-on and turn-off times of 500 ns while switching 1300 V and 20 A.
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