Surface Observation of 4H-SiC (0001) Planarized by Catalyst-Referred Etching

We have developed a novel planarization method called catalyst-referred etching (CARE), which can planarize SiC substrates without the use of an abrasive. In this method, platinum is used as an oxidation catalyst. The surface of CARE-processed 4H-SiC (0001) substrates are atomically flat all over the wafer. It is found that the surface of CARE-processed substrates is composed of alternating wide and narrow terraces with single bilayer-height steps, regardless of the off-cut angle. This unique structure is induced by the differences in the chemical stabilities of the terraces.