雾
薄膜
材料科学
化学气相沉积
杂质
电阻率和电导率
沉积(地质)
薄脆饼
电子迁移率
分析化学(期刊)
乙二胺四乙酸
光电子学
化学
纳米技术
冶金
螯合作用
色谱法
电气工程
生物
物理
工程类
古生物学
气象学
有机化学
沉积物
作者
Takumi Ikenoue,Toshikazu Kawai,Ryo Wakashima,Masao Miyake,Tetsuji Hirato
标识
DOI:10.7567/1882-0786/ab15b3
摘要
A high-mobility Cu2O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu2O without CuO. A 600 nm Cu2O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 × 102 Ω · cm, carrier concentration of 1.2 × 1015 cm−3 and hole mobility of 19.3 cm2 · V−1 · s−1. This hole mobility improved by two or more orders of magnitude compared to that of previous Cu2O thin film obtained by the mist CVD method.
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