Hole mobility improvement in Cu2O thin films prepared by the mist CVD method

A high-mobility Cu₂O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu₂O without CuO. A 600 nm Cu₂O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 × 10² Ω ･ cm, carrier concentration of 1.2 × 10¹⁵ cm⁻³ and hole mobility of 19.3 cm² ･ V⁻¹. This hole mobility improved by two or more orders of magnitude compared to that of previous Cu₂O thin film obtained by the mist CVD method.