High power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE

The first demonstration of distributed feedback InGa-AsGaAs buried heterostructure strained quantum well lasers with In0.49Ga0.51P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p+-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.