扩展X射线吸收精细结构
材料科学
铪
锆
密度泛函理论
单斜晶系
铁电性
正交晶系
原子层沉积
结晶学
分析化学(期刊)
晶体结构
电介质
吸收光谱法
薄膜
化学
计算化学
纳米技术
光电子学
光学
色谱法
物理
冶金
作者
M. Alper Sahiner,Rory J. Vander Valk,Joshua Steier,Jared Savastano,Stephen P. Kelty,Bruce Ravel,J. C. Woicik,Yohei Ogawa,Kristin Schmidt,E. Cartier,Jean Jordan‐Sweet,C. Lavoie,Martin M. Frank
摘要
Crystalline phase identification for hafnium-based ferroelectrics by diffraction techniques has been elusive. We use density-functional-theory (DFT)-assisted extended X-ray absorption fine-structure spectroscopy (EXAFS) to determine the crystal symmetry of thin hafnium zirconium oxide (Hf0.46Zr0.54O2) films grown by atomic layer deposition. Ferroelectric switching in TiN/Hf0.46Zr0.54O2/TiN metal–insulator–metal capacitors is verified. Grazing-incidence fluorescence-yield mode Hf L3 and Zr K absorption edge EXAFS data are compared with reference data calculated from DFT-based atomic coordinates for various structural phases of Hf0.5Zr0.5O2. Via EXAFS multiphase fitting, we confirm that the frequently invoked polar orthorhombic Pca21 phase is present in ferroelectric hafnium zirconium oxide, along with an equal amount of the nonpolar monoclinic P21/c phase. For comparison, we verify that paraelectric HfO2 films exhibit the P21/c phase.
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