A 5.6 μ A Wide Bandwidth, High Power Supply Rejection Linear Low-Dropout Regulator With 68 dB of PSR Up To 2 MHz

低压差调节器 带宽(计算) 涟漪 电容器 瞬态响应 前馈 电压调节器 CMOS芯片 跌落电压 电源抑制比 沉降时间 控制理论(社会学) 电子工程 物理 电气工程 计算机科学 电压 工程类 电信 光电子学 阶跃响应 控制(管理) 控制工程 人工智能 放大器
作者
Kishan Joshi,Sanjeev Manandhar,Bertan Bakkaloğlu
出处
期刊:IEEE Journal of Solid-state Circuits [Institute of Electrical and Electronics Engineers]
卷期号:55 (8): 2151-2160 被引量:63
标识
DOI:10.1109/jssc.2020.2978033
摘要

High power supply rejection (PSR) with a wide rejection frequency band is becoming a critical requirement in linear low-dropout regulators (LDOs) used in complex systems-on-chip (SOCs). Typical LDOs achieve higher PSR within their loop-bandwidth; however, their supply rejection performance degrades with reduced loop-gain outside their loop-bandwidth. Typical LDOs with external filtering capacitors may also have spectral peaking in their PSR response, causing excess system-level supply noise. This work presents an LDO design approach, which achieves a PSR of higher than 68 dB up to 2 MHz frequency and over a wide range of loads up to 250 mA. The wide PSR bandwidth is achieved using a current-mode feedforward ripple canceller (CFFRC) amplifier which provides up to 25 dB of PSR improvement. The feedforward path gain is inherently matched to the forward gain of the LDO, not requiring calibration. The LDO has a fast load transient response with a recovery time of 6.1 μs and has a quiescent current of 5.6 μA. For a full load transition, the LDO achieves settling with overshoot and undershoot voltages below 27.6 and 36.36 mV, respectively. The LDO is designed and fabricated in a 180 nm bipolar/CMOS/DMOS (BCD) technology. The CFFRC amplifier helps to achieve low quiescent power due to its inherent current mode nature, eliminating the need for supply ripple summing amplifiers and adaptive biasing.
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