石墨烯
材料科学
异质结
光电子学
太赫兹辐射
光激发
皮秒
超短脉冲
载流子
费米能级
激光器
纳米技术
激发
光学
物理
电子
量子力学
作者
Liangliang Zhang,Zefeng Chen,Rui Zhang,Yong Tan,Tong Wu,Mostafa Shalaby,Rui Xie,Jianbin Xu
标识
DOI:10.1021/acsami.9b13996
摘要
Charge transfer across the interface and interlayer coupling in the graphene van der Waals heterostructure, which is constructed by graphene and semiconducting transition metal dichalcogenides (TMDCs), is critical for their electronic and optoelectronic applications. Photo-induced charge injection from TMDC to graphene has been studied in several heterostructure photodetectors. However, the response time significantly varies among different reports, ranging from microseconds to milliseconds. In this work, using a graphene/WSe 2 heterostructure as an example, we directly observe the carrier density change in graphene by time-resolved optical-pump terahertz (THz)-probe spectroscopy and show the ultrafast picosecond photoresponse of graphene. In the absence of photoexcitation, THz time-domain spectroscopic measurements show that WSe 2 can transfer holes to graphene and pull down the Fermi level of graphene. After excitation by the ultrafast laser pulse, the transient THz response shows a rapid (∼0.35 ps) increase in the graphene conductivity mainly due to the hole injection from WSe 2 into graphene. Unlike previous reports on band bend as the guidance mechanism for charge transfer, our results show that the relevant mechanism is the band offset across the atomically sharp interface.
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