Electrostatic Discharge Reliability Sensing of Ultrahigh-voltage N-channel Laterally Diffused MOSFETs Modulated by Different Operating Voltages

holding voltage (V h ), laterally diffused MOSFET (LDMOS), optical microscopy (OM), secondary breakdown current (I t2 ), transmission-line pulse (TLP), trigger voltage (V t1 ), ultrahigh voltage (UHV)In this paper, electrostatic discharge (ESD) reliability sensing components for use in ultrahigh-to low-voltage environments were fabricated via a Taiwan Semiconductor Manufacturing Company (TSMC) 0.5 µm ultrahigh voltage (UHV) bipolar-CMOS-DMOS (BCD) process.To understand the trend of the capability of different voltage components under ESD stress, we designed ESD sensing components that can be used at different voltages.These ESD sensing components will be implemented using a circular layout.By changing the drift region and Poly2 parameters with a fixed gate terminal, we proposed a new design with eight sets of parameters.As the length of the drain-side drift region (L D ) increases, the parasitic resistance of the drift region also increases, which will improve the ability of the device to withstand ESD currents.Eventually, to further analyze the ESD capability of the component, a transmission-line pulse (TLP) test system was used for the DUT.When L D is 28 µm, the device is optimal.The I t2 of the device can reach 4.43 A. The FOM is also used to determine the ESD capability of the component, which can reach a maximum of 3.15 × 10 2 (A•V/µm 2 ).