적응형 보쉬공정(Adaptive Bosch Process)을 이용한 식각된 바닥면 연구

We do not use dedicated Bosch process equipment of high cost, it is uses Bosch process that fit existent ICP(Inductively Coupled Plasma) equipment. Bosch process which is method of deep silicon etching is connected repeatedly in using SF? Plasma for etching process and using C₄F? Plasma the deposition process. However, between etching bottom layer and side wall not verticality and curved layer is formed. It is used about this curved layer phenomenon. because of considering gas fraction, temperature, substrate voltage, process time etc. It is used about this curved layer phenomenon and suggested optimum process condition. Standard process for study of process gas used SF? and Ar, and source power 600W, substrate voltage used -200V. Deposition process used C₄F? gas, and source power 600W, substrate voltage did not used. Process substrate temperature makes via 0℃ and progressed study. Through these processing condition, we manufactured mold for NIL(Nano Imprint Lithography) process.